Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)3: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum
Identifieur interne : 00BE17 ( Main/Repository ); précédent : 00BE16; suivant : 00BE18Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)3: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum
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Abstract
Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)3 ([Ru(dphphen)3]2+) as emitter have been fabricated. The effect of an electron transport layer of tris-(8-hydroxyquinoline) aluminum (Alq3) on device performance has been investigated. The emission, peaking at 630 nm, for the indium-tin-oxide (ITO)glass/[Ru(dphphen)3]2+/Ag device reaches maximum luminance after about 15 min at a turn on voltage of 2.5 V. The use of an ITO/[Ru(dphphen)3]2+/Alq3/Ag device reduces this response time to about 120 s at a turn on voltage of 7 V. A maximum brightness of 1300 cd/m2 can be obtained at 15 V within 2 s, with a luminous efficiency of 0.27 cd/A. Based on the charge transporting characteristics of [Ru(dphphen)3]2+ and Alq3 films determined by surface photovoltage spectroscopy, the improved device response time and efficiency are attributed to the enhanced electron injection at [Ru(dphphen)3]2+/Alq3 interface. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)<sub>3</sub>: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum</title><author><name sortKey="Yang, Jihua" uniqKey="Yang J">Jihua Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Otago, Union Place, Dunedin, New Zealand</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Nouvelle-Zélande</country><wicri:regionArea>Department of Chemistry, University of Otago, Union Place, Dunedin</wicri:regionArea><wicri:noRegion>Dunedin</wicri:noRegion></affiliation></author><author><name sortKey="Gordon, Keith C" uniqKey="Gordon K">Keith C. Gordon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Otago, Union Place, Dunedin, New Zealand</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Nouvelle-Zélande</country><wicri:regionArea>Department of Chemistry, University of Otago, Union Place, Dunedin</wicri:regionArea><wicri:noRegion>Dunedin</wicri:noRegion></affiliation></author><author><name sortKey="Zidon, Yigal" uniqKey="Zidon Y">Yigal Zidon</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978</wicri:regionArea><wicri:noRegion>Ramat-Aviv 69978</wicri:noRegion></affiliation></author><author><name sortKey="Shapira, Yoram" uniqKey="Shapira Y">Yoram Shapira</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978</wicri:regionArea><wicri:noRegion>Ramat-Aviv 69978</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0465401</idno><date when="2003-11-15">2003-11-15</date><idno type="stanalyst">PASCAL 03-0465401 AIP</idno><idno type="RBID">Pascal:03-0465401</idno><idno type="wicri:Area/Main/Corpus">00C726</idno><idno type="wicri:Area/Main/Repository">00BE17</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Electroluminescence</term><term>Experimental study</term><term>Indium compounds</term><term>Light emitting devices</term><term>Organic semiconductors</term><term>Photoconductivity</term><term>Photoluminescence</term><term>Ruthenium compounds</term><term>Tin compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>7866Q</term><term>7860F</term><term>7855K</term><term>7240</term><term>Etude expérimentale</term><term>Ruthénium composé</term><term>Semiconducteur organique</term><term>Dispositif émission lumière</term><term>Aluminium composé</term><term>Indium composé</term><term>Etain composé</term><term>Photoconductivité</term><term>Electroluminescence</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)<sub>3</sub> ([Ru(dphphen)<sub>3</sub>]<sup>2+</sup>) as emitter have been fabricated. The effect of an electron transport layer of tris-(8-hydroxyquinoline) aluminum (Alq<sub>3</sub>) on device performance has been investigated. The emission, peaking at 630 nm, for the indium-tin-oxide (ITO)glass/[Ru(dphphen)<sub>3</sub>]<sup>2+</sup>/Ag device reaches maximum luminance after about 15 min at a turn on voltage of 2.5 V. The use of an ITO/[Ru(dphphen)<sub>3</sub>]<sup>2+</sup>/Alq<sub>3</sub>/Ag device reduces this response time to about 120 s at a turn on voltage of 7 V. A maximum brightness of 1300 cd/m2 can be obtained at 15 V within 2 s, with a luminous efficiency of 0.27 cd/A. Based on the charge transporting characteristics of [Ru(dphphen)<sub>3</sub>]<sup>2+</sup> and Alq<sub>3</sub> films determined by surface photovoltage spectroscopy, the improved device response time and efficiency are attributed to the enhanced electron injection at [Ru(dphphen)<sub>3</sub>]<sup>2+</sup>/Alq<sub>3</sub> interface. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)<sub>3</sub>: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum</s1></fA08><fA11 i1="01" i2="1"><s1>YANG (Jihua)</s1></fA11><fA11 i1="02" i2="1"><s1>GORDON (Keith C.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZIDON (Yigal)</s1></fA11><fA11 i1="04" i2="1"><s1>SHAPIRA (Yoram)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, University of Otago, Union Place, Dunedin, New Zealand</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>6391-6395</s1></fA20><fA21><s1>2003-11-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0465401</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)<sub>3</sub> ([Ru(dphphen)<sub>3</sub>]<sup>2+</sup>) as emitter have been fabricated. The effect of an electron transport layer of tris-(8-hydroxyquinoline) aluminum (Alq<sub>3</sub>) on device performance has been investigated. The emission, peaking at 630 nm, for the indium-tin-oxide (ITO)glass/[Ru(dphphen)<sub>3</sub>]<sup>2+</sup>/Ag device reaches maximum luminance after about 15 min at a turn on voltage of 2.5 V. The use of an ITO/[Ru(dphphen)<sub>3</sub>]<sup>2+</sup>/Alq<sub>3</sub>/Ag device reduces this response time to about 120 s at a turn on voltage of 7 V. A maximum brightness of 1300 cd/m2 can be obtained at 15 V within 2 s, with a luminous efficiency of 0.27 cd/A. Based on the charge transporting characteristics of [Ru(dphphen)<sub>3</sub>]<sup>2+</sup> and Alq<sub>3</sub> films determined by surface photovoltage spectroscopy, the improved device response time and efficiency are attributed to the enhanced electron injection at [Ru(dphphen)<sub>3</sub>]<sup>2+</sup>/Alq<sub>3</sub> interface. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66Q</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H60F</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H55K</s0></fC02><fC02 i1="05" i2="3"><s0>001B70B40</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866Q</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7860F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7855K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7240</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Ruthénium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ruthenium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur organique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Organic semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dispositif émission lumière</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Light emitting devices</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etain composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Tin compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Photoconductivité</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Photoconductivity</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Electroluminescence</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electroluminescence</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fN21><s1>315</s1></fN21><fN47 i1="01" i2="1"><s0>0344M000124</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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